Silvaco Victory Stress Features and Capabilities Victory St | ParsOptics

Silvaco Victory Stress Features and Capabilities

Victory Stress provides comprehensive set of models and capabilities covering various aspects of stress simulation and stress engineering:

Stress analysis of arbitrary 3D device structure
Import of device structures from Victory Process, Victory Cell, and ATLAS3D
Export of 3D stress distributions to Victory Device and ATLAS3D
Thermal mismatch between material layers
Local lattice mismatch due to doping
Initial intrinsic stress in specified regions
Hydrostatic stress from capping layers
Stress/strain generated in previous processing step (e.g., oxidation)
Stress simulation for various crystalline (e.g., Si, SiGe, GaAs) and isotropic (e.g., silicon nitride and oxide) materials
Generic 3D anisotropic stress simulation accounts for wafer orientation and arbitrary wafer flat rotation
Estimation of mobility enhancement factors (p- and n- type) by use of piezoresistivity model devices
Can be used with Virtual Wafer Fab for Design of Experiments to analyze stress dependence on process and geometrical parameters of semiconductor

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